Solving High dV/dt Measurement Challenges in GaN and SiC Systems with Multi TMR Configuration
TELL-i develops advanced sensing architectures for environments where conventional sensors fail.
Our latest published research demonstrates a multi-die magnetic field sensing approach that significantly improves current measurement fidelity in high-speed GaN and SiC switching systems exposed to extreme dv/dt transients.
Published in Measurement (Elsevier), 2026 and you can download the open access publication here for free: Link
Why This Matters
Modern wide-bandgap converters switch hundreds of volts in nanoseconds. This creates:
severe transient noise
sensor distortion
false protection triggers
poor control feedback
degraded efficiency
TELL-i’s multi-die architecture suppresses common-mode switching disturbance at the sensor level while preserving bandwidth.
Demonstrated Results
Under switching transients up to 10.55 V/ns, the prototype achieved:
18.41 dB SNR with 5 MHz filtering
21.81 dB SNR with 2.5 MHz filtering
91% improvement over conventional single-sensor processing